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fig1b
4 ResourcesAccelerated CA testing on bare epilayer Si/GaN photocathode at constant bias of -0.6 V vs RHE under 3.5 sun illumination for 150 hours in 0.5 M H2SO4 (pH=0.4) -
fig1c
11 ResourcesIntermittent chronoamperometry (CA) testing was performed on Si/GaN photocathode in hourly manner. The LSV scan at 0 hour, 1 hour CA, 2 hours CA, 3 hours CA, 4 hours CA, 6 hours... -
fig1d
9 ResourcesFig1d results were obtained using a 3-electrode configuration with IrOx as the counter electrode and saturated calomel electrode as the reference electrode. Two Si/GaN... -
fig2b
5 ResourcesPhotoconductive atomic force microscopy (PC-AFM) measurements were conducted on Si/GaN samples. PeakForce TUNA mode was used to acquire the morphology and current... -
fig2d
5 ResourcesAfter 10 hrs of chronoamperometry (CA) photoconductive atomic force microscopy (PC-AFM) measurements were conducted on Si/GaN samples using a commercial AFM system (Bruker... -
fig3f
8 ResourcesXPS of Si/GaN photocathode after 10 hour chronoamperometry (CA) testing. Surface chemical composition and valence band structure of GaN were obtained by X-ray photoemission... -
fig3e
8 ResourcesXPS of Si/GaN photocathode after 4 hour chronoamperometry (CA) testing. Surface chemical composition and valence band structure of GaN were obtained by X-ray photoemission... -
fig3c
6 ResourcesXPS after 0hr of chronoampometry. Surface chemical composition and valence band structure of GaN were obtained by X-ray photoemission spectroscopy (XPS) on a Kratos Axis Ultra... -
fig3d
8 ResourcesXPS of Si/GaN photocathode after 1 hour chronoamperometry (CA) testing. Surface chemical composition and valence band structure of GaN were obtained by X-ray photoemission...
