Formats: XLSX JSON Data Source Type: Lab Experimental

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  • fig1a

    6 Resources
    10 hours chronoamperometry (CA) testing under 1 sun illumination and constant bias at -0.6 V vs RHE, the corresponding Faradaic efficiency reveals a self-improving nature of...
  • fig1b

    4 Resources
    Accelerated CA testing on bare epilayer Si/GaN photocathode at constant bias of -0.6 V vs RHE under 3.5 sun illumination for 150 hours in 0.5 M H2SO4 (pH=0.4)
  • fig1c

    11 Resources
    Intermittent chronoamperometry (CA) testing was performed on Si/GaN photocathode in hourly manner. The LSV scan at 0 hour, 1 hour CA, 2 hours CA, 3 hours CA, 4 hours CA, 6 hours...
  • fig1d

    9 Resources
    Fig1d results were obtained using a 3-electrode configuration with IrOx as the counter electrode and saturated calomel electrode as the reference electrode. Two Si/GaN...
  • fig2b

    5 Resources
    Photoconductive atomic force microscopy (PC-AFM) measurements were conducted on Si/GaN samples. PeakForce TUNA mode was used to acquire the morphology and current...
  • fig2d

    5 Resources
    After 10 hrs of chronoamperometry (CA) photoconductive atomic force microscopy (PC-AFM) measurements were conducted on Si/GaN samples using a commercial AFM system (Bruker...
  • fig3f

    8 Resources
    XPS of Si/GaN photocathode after 10 hour chronoamperometry (CA) testing. Surface chemical composition and valence band structure of GaN were obtained by X-ray photoemission...
  • fig3e

    8 Resources
    XPS of Si/GaN photocathode after 4 hour chronoamperometry (CA) testing. Surface chemical composition and valence band structure of GaN were obtained by X-ray photoemission...
  • fig3c

    6 Resources
    XPS after 0hr of chronoampometry. Surface chemical composition and valence band structure of GaN were obtained by X-ray photoemission spectroscopy (XPS) on a Kratos Axis Ultra...
  • fig3d

    8 Resources
    XPS of Si/GaN photocathode after 1 hour chronoamperometry (CA) testing. Surface chemical composition and valence band structure of GaN were obtained by X-ray photoemission...
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