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fig1a_FE.xlsx
Faradaic efficiency measured by gas chromatography (GC) of chronoamperometry (CA) testing of Si/GaN photocathode in 0.5M (pH=0.4) sulfuric acid under -0.6V vs RHE and one sun illumination for 10 hours. The test was performed by using a three-electrodes photoelectrochemical cell configuration, with an IrOx as counter electrode and a saturated calomel electrode (SCE) as reference electrode.
Back side of the Si/GaN sample was etched using the HF vapor for 2 min to remove the silicon oxide and the fluorine that weakly bonding to the surface temporarily prevented the surface being oxidized during the sample transfer to the sputtering chamber. 50 nm Al and 300 nm Au were sputtered onto the silicon side and annealed in a tube furnace backfilled with Ar at 450 °C for 10 min to form Ohmic contact. Then a graphite colloidal adhesive (Ted Pella PELCO Isopropanol based graphite paint) was used to connect the Al/Au side to a copper foil.
Resource Metadata
| data source | LBL PEC Stand 1 |
|---|---|
| lab environment | Indoor Lab |
| measurement | Biased |
| measurement type | GC |
| metadata modified | 4 years ago |
| mimetype | application/vnd.openxmlformats-officedocument.spreadsheetml.sheet |
| size | 9.9 KiB |
| Last updated | February 3, 2021 |
|---|---|
| Created | February 3, 2021 |
| Format | application/vnd.openxmlformats-officedocument.spreadsheetml.sheet |
| License | No License Provided |