Photoelectrochemically Self-Improving Si/GaN Photocathode - Datasets
| Project ID | eccb7743-4859-46df-b8d5-de83bfa6d494 |
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fig3f
8 ResourcesXPS of Si/GaN photocathode after 10 hour chronoamperometry (CA) testing. Surface chemical composition and valence band structure of GaN were obtained by X-ray photoemission... -
fig3e
8 ResourcesXPS of Si/GaN photocathode after 4 hour chronoamperometry (CA) testing. Surface chemical composition and valence band structure of GaN were obtained by X-ray photoemission... -
fig3c
6 ResourcesXPS after 0hr of chronoampometry. Surface chemical composition and valence band structure of GaN were obtained by X-ray photoemission spectroscopy (XPS) on a Kratos Axis Ultra... -
fig3d
8 ResourcesXPS of Si/GaN photocathode after 1 hour chronoamperometry (CA) testing. Surface chemical composition and valence band structure of GaN were obtained by X-ray photoemission...