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Calculated formation energy of (101 ̅0) m-plane GaN surfaces with different oxygen configuration within the anion and cation-rich limits: ideal GaN surface of m-plane; configurations with 100% replacement of nitrogen by oxygen on the surface m-plane; 100% replacement of nitrogen by oxygen in the subsurface bilayer m-plane; and configurations with 50% replacement of nitrogen of the surface and subsurface bilayers by oxygens m-plane. The ideal surface is chosen as the reference.
Resource Metadata
metadata modified | пре 5 година |
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method | Density-functional theory |
mimetype | image/jpeg |
size | 346,4 KB |
Последње ажурирање | 04. фебруар 2021. |
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Креирано | 04. фебруар 2021. |
Формат | image/jpeg |
Лиценца | Лиценца Није Пружена |