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Calculated formation energy of (0001 ̅) c-plane GaN surfaces with different oxygen configuration within the anion and cation-rich limits: ideal GaN surface of c-plane; configurations with 100% replacement of nitrogen by oxygen on the surface c-plane; 100% replacement of nitrogen by oxygen in the subsurface bilayer c-plane; and configurations with 50% replacement of nitrogen of the surface and subsurface bilayers by oxygens c-plane. The ideal surface is chosen as the reference.
Resource Metadata
metadata modified | pre 4 godine |
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mimetype | image/jpeg |
size | 312 KB |
Poslednje ažuriranje | 04. februar 2021. |
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Kreirano | 04. februar 2021. |
Format | image/jpeg |
Licenca | Licenca Nije Pružena |