Capability Node: LBNL PEC In-Situ and Operando Nanoscale Characterization Measurement Types: XPS Technology Type: PEC

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  • Photoelectrochemically Self-Improving Si/GaN Photocathode

    12 Resources
    The resources are raw data for plotting the figures presented in the paper. These excel files includes the data of: photocurrent density vs voltage (J-V curves), photocurrent vs...

  • fig3f

    8 Resources
    XPS of Si/GaN photocathode after 10 hour chronoamperometry (CA) testing. Surface chemical composition and valence band structure of GaN were obtained by X-ray photoemission...

  • fig3e

    8 Resources
    XPS of Si/GaN photocathode after 4 hour chronoamperometry (CA) testing. Surface chemical composition and valence band structure of GaN were obtained by X-ray photoemission...

  • fig3c

    6 Resources
    XPS after 0hr of chronoampometry. Surface chemical composition and valence band structure of GaN were obtained by X-ray photoemission spectroscopy (XPS) on a Kratos Axis Ultra...

  • fig3d

    8 Resources
    XPS of Si/GaN photocathode after 1 hour chronoamperometry (CA) testing. Surface chemical composition and valence band structure of GaN were obtained by X-ray photoemission...
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