Calculated formation energy of (101 ̅0) m-plane GaN surfaces with different oxygen configuration within the anion and cation-rich limits: ideal GaN surface of m-plane; configurations with 100% replacement of nitrogen by oxygen on the surface m-plane; 100% replacement of nitrogen by oxygen in the subsurface bilayer m-plane; and configurations with 50% replacement of nitrogen of the surface and subsurface bilayers by oxygens m-plane. The ideal surface is chosen as the reference.

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method Density-functional theory
mimetype application/vnd.openxmlformats-officedocument.spreadsheetml.sheet
size 20.9 KiB

Last updated February 4, 2021
Created February 4, 2021
Format application/vnd.openxmlformats-officedocument.spreadsheetml.sheet
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