10 hours chronoamperometry (CA) testing under 1 sun illumination and constant bias at -0.6 V vs RHE, the corresponding Faradaic efficiency reveals a self-improving nature of GaN, inset: CA testing on bare Si for 5 hours under 1 sun illumination and -0.6 V vs RHE, this bare Si photocathode rapidly drops down to < 0.05 mA/cm2 within an hour. Both CA testing performed in 0.5 M H2SO4 (pH=0.4).
Dataset Metadata
| Author |
Francesca M. Toma
|
| Maintainer Email |
fmtoma@lbl.gov
|
| DOI |
10.17025/1764126
|
| Institution |
Lawrence Berkeley National Laboratory
|
| Capability Node |
LBNL PEC Device In-Situ and Operando Testing
LBNL Probing and Mitigating Corrosion
|
| Technology Type |
PEC
|
| Data Source Type |
Lab Experimental
|
| Sample Barcode |
|
| Sample Name |
Si/GaN photocathode (GaN thin film protected Si solar cell)
|
| Collection Date |
|
| Comments |
|
| Measurement Types |
|
| Measurement Type Other |
None
|
Additional Info
| Author |
Francesca M. Toma
|
| Updated |
February 9, 2021, 15:32 (UTC)
|
| Created |
February 3, 2021, 20:04 (UTC)
|
