Photoconductive atomic force microscopy (PC-AFM) measurements were conducted on Si/GaN samples. PeakForce TUNA mode was used to acquire the morphology and current simultaneously. A PtIr conductive probe with spring constant of 2.8 Nm-1 was used for the scanning. A white light source was used to illuminate the surface during the acquisition. Line scan extracting the topography and photocurrent from a as-received Si/GaN sample. The topography mapping is 2 × 2 µm2. The sample bias was 0.4V and this photoconductive AFM measurement was performed under white light front illumination with an angle.

Dataset Metadata

Author Francesca M. Toma
Maintainer Email fmtoma@lbl.gov
DOI 10.17025/1764154
Institution Lawrence Berkeley National Laboratory
Capability Node LBNL PEC Device In-Situ and Operando Testing
LBNL PEC In-Situ and Operando Nanoscale Characterization
LBNL Probing and Mitigating Corrosion
Technology Type PEC
Data Source Type Lab Experimental
Sample Barcode
Sample Name
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Comments
Measurement Types Other
Measurement Type Other None

Additional Info

Author Francesca M. Toma
Updated February 5, 2021, 19:27 (UTC)
Created February 3, 2021, 23:47 (UTC)