XPS of Si/GaN photocathode after 4 hour chronoamperometry (CA) testing.

Surface chemical composition and valence band structure of GaN were obtained by X-ray photoemission spectroscopy (XPS) on a Kratos Axis Ultra DLD system at a takeoff angle of 0° relative to the surface normal. An Al Kα source (hν = 1486.6 eV) was used to excite the core level electrons. Pass energy of 20 eV was used for the narrow scan of core levels and valence band spectra, and step size of 0.05 eV and 0.025 eV, respectively. The Spectral fitting was conducted using CasaXPS analysis software. The binding energy scales of all core levels were corrected to the N 1s of Ga – N bond at 397.8 eV. XPS O1s core level spectra from 4 hour CA tested Si/GaN sample, and deconvolution shows O - Ga bond, O - N - Ga bond and OH - H2O bond.

Dataset Metadata

Author Francesca M. Toma
Maintainer Email fmtoma@lbl.gov
DOI 10.17025/1764161
Institution Lawrence Berkeley National Laboratory
Capability Node LBNL PEC Device In-Situ and Operando Testing
LBNL PEC In-Situ and Operando Nanoscale Characterization
LBNL Probing and Mitigating Corrosion
Technology Type PEC
Data Source Type Lab Experimental
Sample Barcode
Sample Name
Collection Date
Comments
Measurement Types XPS
Measurement Type Other None

Author Francesca M. Toma
Updated February 5, 2021, 19:26 (UTC)
Created February 4, 2021, 00:50 (UTC)