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fig3c_raw_data.xlsx
Surface chemical composition and valence band structure of GaN were obtained by X-ray photoemission spectroscopy (XPS) on a Kratos Axis Ultra DLD system at a takeoff angle of 0° relative to the surface normal. An Al Kα source (hν = 1486.6 eV) was used to excite the core level electrons. Pass energy of 20 eV was used for the narrow scan of core levels and valence band spectra, and step size of 0.05 eV and 0.025 eV, respectively. The Spectral fitting was conducted using CasaXPS analysis software. The binding energy scales of all core levels were corrected to the N 1s of Ga – N bond at 397.8 eV. XPS O1s core level spectra from as-received Si/GaN sample, and deconvolution shows O - Ga bond and OH - H2O bond.
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Resource Metadata
| data source | LBL PEC Stand 1 |
|---|---|
| data tool | Multi-spectra |
| lab environment | Indoor Lab |
| measurement | Unbiased |
| measurement type | XPS |
| metadata modified | 4 years ago |
| mimetype | application/vnd.openxmlformats-officedocument.spreadsheetml.sheet |
| size | 19.9 KiB |
| Last updated | February 3, 2021 |
|---|---|
| Created | January 30, 2021 |
| Format | application/vnd.openxmlformats-officedocument.spreadsheetml.sheet |
| License | No License Provided |