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fig4a.xlsx
Calculated formation energy of (0001 ̅) c-plane GaN surfaces with different oxygen configuration within the anion and cation-rich limits: ideal GaN surface of c-plane; configurations with 100% replacement of nitrogen by oxygen on the surface c-plane; 100% replacement of nitrogen by oxygen in the subsurface bilayer c-plane; and configurations with 50% replacement of nitrogen of the surface and subsurface bilayers by oxygens c-plane. The ideal surface is chosen as the reference.
Resource Metadata
| metadata modified | vor 4 Jahren |
|---|---|
| mimetype | application/vnd.openxmlformats-officedocument.spreadsheetml.sheet |
| size | 10 KiB |
| Zuletzt aktualisiert | 4. Februar 2021 |
|---|---|
| Erstellt | 4. Februar 2021 |
| Format | application/vnd.openxmlformats-officedocument.spreadsheetml.sheet |
| Lizenz | Keine Lizenz angegeben |