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          4a.jpgCalculated formation energy of (0001 ̅) c-plane GaN surfaces with different oxygen configuration within the anion and cation-rich limits: ideal GaN surface of c-plane; configurations with 100% replacement of nitrogen by oxygen on the surface c-plane; 100% replacement of nitrogen by oxygen in the subsurface bilayer c-plane; and configurations with 50% replacement of nitrogen of the surface and subsurface bilayers by oxygens c-plane. The ideal surface is chosen as the reference. 
Resource Metadata
| metadata modified | 5 taon ang nakalipas | 
|---|---|
| mimetype | image/jpeg | 
| size | 312 KiB | 
| Last updated | Pebrero 4, 2021 | 
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| Created | Pebrero 4, 2021 | 
| Format | image/jpeg | 
| License | No License Provided | 
 
            